APT751R2BN-GULLWING
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APT751R2BN-GULLWING datasheet
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МаркировкаAPT751R2BN-GULLWING
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ПроизводительMicrosemi Corporation
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ОписаниеMicrosemi Corporation APT751R2BN-GULLWING Mfr Package Description: TO-247, 3 PIN Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Surface Mount: Yes Terminal Form: GULL WING Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 9 A DS Breakdown Voltage-Min: 750 V Drain-source On Resistance-Max: 1.2 ohm Pulsed Drain Current-Max (IDM): 36 A
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Количество страниц4 шт.
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Форматы файлаHTML, PDF
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